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Heusler Half-Metals on GaAs for Spin Injection

机译:GaAs上自旋注入的Heusler半金属

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摘要

Epitaxial films of the half-metallic ferromagnets Co_2MnAl and Co_2MnGa were grown on GaAs substrates by MBE. The similar structure and close lattice matching to GaAs make them good candidates for spintronic devices. Magnetic and transport properties of the full Heusler alloys show several anomalous properties. Magnetization measurements yield ferromagnetic Curie temperatures of T_C~800-1000 K, illustrating that cobalt has a stronger exchange interaction compared to nickel-based materials, such as Ni_2MnGa, having Curie temperatures in the range T_C~300-400 K. Measurements in the Hall geometry with the field applied perpendicular to the layers exhibit a giant Hall effect (GHE) at room temperature. The GHE is a result of the extraordinary Hall effect and is driven by the strong out-of-plane magnetization. Epitaxial Co_(1-x)Mn_x films were also grown on GaAs. The range of ferromagnetism for epitaxially strained Co_(1-x)Mn_x, film is found for x_(FM) < 0.7, unlike bulk alloys where X_(FM) < 0.32.
机译:通过MBE在GaAs衬底上生长了半金属铁磁体Co_2MnAl和Co_2MnGa的外延膜。与GaAs相似的结构和紧密的晶格匹配使其成为自旋电子器件的良好候选者。完整的Heusler合金的磁性和传输性能显示出几种异常特性。磁化测量得出的铁磁居里温度为T_C〜800-1000 K,这表明与居里温度在T_C〜300-400 K范围内的镍基材料(如Ni_2MnGa)相比,钴具有更强的交换相互作用。垂直于层施加场的几何形状在室温下表现出巨大的霍尔效应(GHE)。 GHE是非同寻常的霍尔效应的结果,并且受强大的平面外磁化强度驱动。外延Co_(1-x)Mn_x薄膜也生长在GaAs上。发现外延应变的Co_(1-x)Mn_x薄膜的铁磁性范围是x_(FM)<0.7,与块状合金的X_(FM)<0.32不同。

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