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Search for effective spin injection heterostructures based on half-metal Heusler alloys/gallium arsenide semiconductors: A theoretical investigation

机译：搜索基于半金属Heusler合金/砷化镓半导体的有效旋转注射异质结构：一种理论研究

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作者
Sivakumar, Chockalingam.;
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作者单位

The University of Alabama.;

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授予单位 The University of Alabama.;
学科
学位 Ph.D.
年度 2016
页码 107 p.
总页数 107
原文格式 PDF
正文语种 eng
中图分类 AAI10162556;
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专利

1. Antiferromagnetic half-metals, gapless half-metals, and spin gapless semiconductors: The D03-type Heusler alloys [J] . Gao G.Y., Yao Kai-Lun Applied Physics Letters . 2013,第23期

机译：反铁磁半金属，无间隙半金属和自旋无间隙半导体：D03型Heusler合金
2. Antiferromagnetic half-metals, gapless half-metals, and spin gapless semiconductors: The D0_3-type Heusler alloys [J] . G. Y. Gao, Kai-Lun Yao Applied Physics Letters . 2013,第23期

机译：反铁磁半金属，无间隙半金属和自旋无间隙半导体：D0_3型Heusler合金
3. Magnetic semiconductors and half-metals in FeRu-based quaternary Heusler alloys [J] . Guo Xingmiao, Ni Zhaoning, Liang Zhengyu, Computational Materials Science . 2018,第期

机译：磁半导体和Feru型季勒斯合金中的半金属
4. Heusler Half-Metals on GaAs for Spin Injection [C] . D Heiman, Y J Chen, D Basiaga, Conference Series no.184; International Symposium on Compound Semiconductors; 20040912-16; Seoul(KR) . 2004

机译：GaAs上自旋注入的Heusler半金属
5. PIEZO- AND PHOTO-MODULATION STUDIES OF SEMICONDUCTORS: I. DILUTED MAGNETIC SEMICONDUCTORS. II. GALLIUM-ARSENIDE/ALUMINUM-GALLIUM - ARSENIDE, ZINC-SELENIDE, AND CADMIUM - MANGANESE - TELLURIDE HETEROSTRUCTURES. [D] . LEE, YUNG-RAI. 1987

机译：半导体的压电调制和光调制研究：I.稀释的磁性半导体。二。砷化镓/铝镓-砷化物，锌-硒化物和镉-锰-碲化物异质结构。
6. Evidence of Type-II Band Alignment in III-nitride Semiconductors: Experimental and theoretical investigation for In0.17Al0.83N/GaN heterostructures [O] . Jiaming Wang, Fujun Xu, Xia Zhang, -1

机译：III型氮化物半导体中II型能带对准的证据：In0.17Al0.83N / GaN异质结构的实验和理论研究
7. Spin injection from the Heusler alloy Co_2MnGe into Al_0.1Ga_0.9As/GaAs heterostructures [O] . Dong, X. Y., Adelmann, C., Xie, J. Q., 2004

机译：从Heusler合金Co_2mnGe自旋注入al_0.1Ga_0.9as / Gaas 异质
8. Scanning Photovoltage Investigation of Silicon- and Gallium Arsenide-Based Metal Oxide Semiconductor (MOS) Capacitors [R] . Streever, R. L., Winter, J. J. 1981

机译：基于硅和砷化镓的金属氧化物半导体（mOs）电容器的扫描光电压研究

Search for effective spin injection heterostructures based on half-metal Heusler alloys/gallium arsenide semiconductors: A theoretical investigation

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