High-efficiency AlGaAs/GaAs quantum well semiconductor laser

机译：高效AlGaAs / GaAs量子阱半导体激光器

获取原文

获取原文并翻译 | 示例

获取外文期刊封面目录资料

页面导航

摘要
著录项
引文网络
相似文献
相关主题

摘要

The AlGaAs/GaAs double quantum well semiconductor lasers grown by molecular beam epitaxy show high external quantum efficiency and high power conversion efficiency at continuous-wave power output using an asymmetric structure. The threshold current density and slope efficiency of the device are 200A/cm~2 and 1.25W/A, respectively. The high external quantum efficiency and maximum conversion efficiency are 81% and 66%, respectively.

机译：通过分子束外延生长的AlGaAs / GaAs双量子阱半导体激光器在使用不对称结构的连续波功率输出中显示出高的外部量子效率和高的功率转换效率。器件的阈值电流密度和斜率效率分别为200A / cm〜2和1.25W / A。高外部量子效率和最大转换效率分别为81％和66％。

著录项

来源
《Conference on Semiconductor Lasers and Applications; 20071112-14; Beijing(CN)》|2007年|P.iv|共2页
会议地点 Beijing(CN)
作者
Lin Li; Chunming Wan; Zhanguo Li; Mei Li; Guojun Liu;
展开▼
作者单位

National Key Lab of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022;

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类激光技术、微波激射技术;
关键词
power conversion efficiency; quantum well; semiconductor laser;

机译：功率转换效率量子阱半导体激光器;

相似文献

外文文献
中文文献
专利

1. High-efficiency AlGaAs/GaAs single-quantum-well semiconductor laser with strained superlattice buffer layer [J] . Imanaka K., Sato F. IEEE Photonics Technology Letters . 1989,第1期

机译：具有应变超晶格缓冲层的高效AlGaAs / GaAs单量子阱半导体激光器
2. Nonlinear-optical effects in semiconductor lasers based on InGaAs/GaAs/AlGaAs quantum-confinement heterostructures [J] . Averkiev NS, Slipchenko SO, Sokolova ZN, Semiconductors . 2007,第3期

机译：基于InGaAs / GaAs / AlGaAs量子约束异质结构的半导体激光器中的非线性光学效应
3. Graded doping low internal loss 1060-nm InGaAs/AlGaAs quantum well semiconductor lasers [J] . Tan Shao-Yang, Zhai Teng, Zhang Rui-Kang, 中国物理：英文版 . 2015,第006期

机译：渐变掺杂低内部损耗1060 nm InGaAs / AlGaAs量子阱半导体激光器
4. High-efficiency AlGaAs/GaAs quantum well semiconductor laser [C] . Lin Li, Chunming Wan, Zhanguo Li, Conference on Semiconductor Lasers and Applications . 2008

机译：高效AlgaAs / GaAs量子井半导体激光器
5. Vertical Integration of Optical Waveguides in the AlGaAs/GaAs Semiconductors [D] . Liao, Zhongfa. 2018

机译：AlGaAs / GaAs半导体中光波导的垂直集成
6. Output Power Limitations and Improvements in Passively Mode Locked GaAs/AlGaAs Quantum Well Lasers [O] . Giuseppe Tandoi, Charles N. Ironside, John H. Marsh, -1

机译：输出电源限制和被动模式锁定GaAs / Algaas量子阱激光器的改进
7. Linewidth, Autocorrelation and Cross-Correlation Measurements of Counterpropagating Modes in GaAs/AlGaAs Semiconductor Ring Lasers [O] . Giuliani, Guido, Miglierina, Riccardo, Sorel, Marc, 2005

机译：GaAs / AlGaAs半导体环形激光器中反向传播模式的线宽，自相关和互相关测量
8. Spatial Modes of Concentric-Circle-Grating Surface-Emitting, AlGaAs/GaAs QuantumWell Semiconductor Laser [R] . Erdogan, T., King, O., Wicks, G. W., 1992

机译：同心圆光栅表面发射，alGaas / Gaas量子阱半导体激光器的空间模式

High-efficiency AlGaAs/GaAs quantum well semiconductor laser

摘要

著录项

引文网络

相似文献

相关主题

期刊订阅