首页> 外文会议>Conference on Photonic Crystal Materials and Nanostructures; 20040427-20040429; Strasbourg; FR >Polarization effects in second-harmonic generation in a GaN-based one-dimensional photonic crystal
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Polarization effects in second-harmonic generation in a GaN-based one-dimensional photonic crystal

机译:GaN基一维光子晶体中二次谐波产生中的偏振效应

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Investigations of polarizations effects in second-harmonic generation of a one-dimensional photonic crystal based on gallium nitride were performed for the fundamental beam incident on the surface of the photonic crystal. The angle of incidence, the azimuthal rotation angle of the photonic crystal, the frequency, and the polarization behaviour for strongly enhanced second-harmonic generation agree well with the identified position and polarization of the resonant Bloch modes. Along the Γ—X direction, giant enhancements of 7500 times in the second-harmonic conversion have been obtained in the one-dimensional photonic crystal by comparison with the unpatterned GaN layer. The combined role of the resonant coupling of the fundamental field and of the second-harmonic field has been observed as the polarization of the fundamental beam is rotated.
机译:对入射在光子晶体表面的基本光束进行了基于氮化镓的一维光子晶体二次谐波产生中的偏振效应研究。入射角,光子晶体的方位角旋转角,频率和强烈增强的二次谐波产生的偏振特性与共振Bloch模式的确定位置和偏振非常吻合。与未构图的GaN层相比,在一维光子晶体中沿Γ-X方向在二次谐波转换中获得了7500倍的巨幅增强。当旋转基本光束的偏振时,已经观察到基本场和二次谐波场的共振耦合的组合作用。

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