首页> 外文会议>Conference on Optical Microlithography XV Pt.1, Mar 5-8, 2002, Santa Clara, USA >Mask Error Tensor and Causality of Mask Error Enhancement for Low-ki Imaging: Theory and Experiments
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Mask Error Tensor and Causality of Mask Error Enhancement for Low-ki Imaging: Theory and Experiments

机译:低Ki成像的掩模误差张量和掩模误差增强的因果关系:理论与实验

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摘要

Three important concepts about the mask error enhancement factor (MEEF) are proposed in this paper. From the fundamental assumption, the MEEF is derived to be a function of the image log slope and the aerial image variation caused by mask making error. Secondly, a mask error common window indicator (MECWIN) is proposed to evaluate the MEEF and mask CD specification by knowing the wafer CD tolerance. This concept is used to define the mask CD specification without any ambiguity. Finally, we describe the complex two-dimensional response to the mask making error around the line-end by a mask error enhancement tensor. Both theoretical derivations and experiments to justify the theory are presented in this paper.
机译:本文提出了关于掩模误差增强因子(MEEF)的三个重要概念。从基本假设出发,得出MEEF是图像对数斜率和掩模制造误差引起的航拍图像变化的函数。其次,提出了一种掩模误差通用窗口指示器(MECWIN),通过了解晶圆的CD公差来评估MEEF和掩模CD规范。此概念用于定义口罩CD规范,没有任何歧义。最后,我们通过掩模误差增强张量描述了围绕线端的掩模制造误差的复杂二维响应。本文介绍了理论推导和证明该理论的实验。

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