DC Characterization of an InP/InGaAs Tunneling Emitter Bipolar Transistor (TEBT)

摘要

The DC performances of a novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) are studied and demonstrated. The studied device can be operated under an extremely wide collector current regime larger than 11 decades in magnitude (10~(-12) to 10~(-1)A). A current gain of 3 is obtained even operated at an ultra-low collector current of 3.9x10~(-12)A (1.56x10~(-7)A/cm~2). The common-emitter and common-base breakdown voltages of the studied device are higher than 2 and 5V, respectively. Furthermore, a very low collector-emitter offset voltage of 40mV is found. The temperature-dependent DC characteristics of the TEBT are measured and studied. Consequentially, based on experimental results, the studied device provides the promise for low-power electronics applications.