Structural diagnostics of 'quantum' layers by X-ray diffraction and standing waves

摘要

We analyze the possibility for simultaneous adequate treatment of angular dependencies of the X-ray diffraction reflectivity and photoelectron yield (X-ray standing waves method) in order to extract the structural characteristics of semiconducting materials with ultra fine inclusions. Facilities of such an approach for evaluation of the degree of structural perfection of the layers, the phase shift of upper layers with respect to the buffer, the lattice parameters of particular layers and interfaces between them are demonstrated within the analysis of heterostructures based on the Si matrix with the Si_(1-x)Ge_x quantum wells and on the GaAs matrix with the InAs quantum dots.