Modeling diffusion of ion implanted impurity in silicon under a temperature gradient

摘要

For description of the diffusion process in a temperature field at the constant temperature gradient in semi-infinite media from an extended source of infinite extent and an instantaneous plane source the simple formulae taking into account the temperature dependence of diffusion coefficient is proposed. The analytical solution of the equation describing thermodiffusion for same conditions for gaussian form source is given. Since in this solution the temperature dependence of diffusion coefficient is not taken account the limits of its applicability is examined.