Polycrystalline silicon for semiconductor devices

摘要

The optical properties of polycrystalline silicon films with oxygen incorporation in grain boundary were experimentally studied. The Raman scattering, photoluminescent and Fourier-transformed infrared spectra were measured. The morphology of the films were studied by atomic force microscopy. The strong correlation between the oxygen content and optical properties, and polarization was found. The oxygen diffuse incorporation corresponds the energetic levels in band gap around E_c-0.27 eV. The thermal annealing of polycrystalline film by the temperature more than 150℃ produces the siloxane bonding with defect level in energy diagram near E_c-0.14 eV. The quantum beats of intensity of optical and electronic signal due to the quantum interference of closed electronic states was studied.