Semiconductor device to which polycrystalline silicon film and polycrystalline silicon film are applied

摘要

In order to provide a polycrystalline silicon film having superiority in its own characteristics related to transistor characteristics such as diffusion and precipitation of dopant, surface state or carrier mobility, and in addition, controllability of such characteristics, A polycrystalline silicon film grown on 12) interfaces with the amorphous layer 12, and has a base layer 131 having a relatively high preferred orientation ratio; A low energy layer 133 grown on an upper side of the base layer 131 and hardly changing and having a preferred orientation ratio lower than the preferred orientation ratio of the base layer 131; And a surface layer 135 grown on the upper side of the low energy layer 133 and having a preferred orientation ratio that is higher towards the surface of the polycrystalline silicon film.