Sub-50 nm isolated line and trench width artifacts for CD metrology

摘要

We present a technique to produce isolated lines and trenches with arbitrary widths in the range of 12 nm to 500 nm, arbitrary heights and depths in the range of 100 nm to 2 μm, 90-degree sidewall angle, and top corner radii as small as 5 nm. These structures are ideal candidates as Critical Dimension (CD) absolute standards. The sidewall angle can further be varied to create an arbitrary sidewall angle that can be accurately measured.