Low Threshold DFB Laser Integrated High Speed EA Modulators Based on Ridge Waveguide Structure by ICP Etching

摘要

Inductively coupled plasma (ICP) dry etching technique has been adopted to form narrow high-mesa ridge waveguide structure in a high-speed integrated EA modulator. A 3dBe bandwidth of over 12 GHz has been achieved without the use of polyimide in the DFB laser integrated EA modulator. Meanwhile, integrated device with a threshold current as low as 12 mA has been demonstrated by optimization of the wavelength detuning.