Influence of Polishing Parameters on Chemical Mechanical Polishing Processes of LiTaO_3 Wafer

摘要

Lithium tantalite (LiTaO_3) possesses a combination of unique electro-optical, acoustic, piezoelectric, pyroelectric and non-linear optical properties, making it a suitable material for applications in high frequency, broad width-band SAW and BAW components, filters in television receivers, etc. The surface quality of LiTaO_3 wafers decides the performances of the devices. In this paper, the technique of chemical mechanical polishing (CMP) was used to polish LiTaO_3 wafers. The influences of the polishing parameters on the CMP processes of LiTaO_3 wafers were analyzed in detail based on the measurement of the material removal rate, surface roughness and topograph of the polished wafers in different polishing conditions.