Effects of Stress Annealing on the Index of Refraction of SiO_2 Layers in MOS devices

摘要

In this paper we present the results of a study of the effect of high-temperature stress annealing in nitrogen on the index of refraction of SiO_2 layers in MOS (metal/oxide/semiconductor) devices. The dependence of mechanical stress in the Si-SiO_2 system on the annealing conditions has been experimentally characterized. Subsequently, we have correlated such properties with the dependence of the index of refraction on processing conditions and oxide thickness.