Characterization of InAlAs/InGaAs APD arrays for SWIR imaging applications

摘要

40x40 element InAlAs/InGaAs APD arrays have been fabricated and characterized for performance in short wave infrared (SWIR) applications. Characterization data collected to date indicate that the arrays have > 99% operability at operating gains of 10. The median un-multiplied dark current for an array element is about 170 pA, and the un-multiplied responsivity at 1550 nm is about 0.75 AAV.