3D Capacitance Extraction of IC Interconnects Using Field Solvers and Homogenization Technique

摘要

In the extraction and simulation of IC chips using electromagnetic field solvers, one of the difficulties is the modeling of the multilayered dielectric structures. The consideration of these thin layers in the field solvers increases dramatically the memory and the computation time. This paper presents a numerical bomogeoization strategy of multilayered dielectric media that allows removing die dielectric layers from the field solver models. A technique that transforms the homogenized anisotropic material to an isotropic material is also developed. This homogenization strategy has been applied in both the finite element method and a fast multipole expansion accelerated boundary element method. A case of 3D critical net capacitance extraction of a real digital chip is given as an example.