Effects of direct lateral Current Injection on the Performance, Overall Efficiency and Emission Distribution in GaN LED structures: a 2D Computational Study

摘要

We study and demonstrate the potential benefits of using a transverse junction structure in GaN LEDs by simulating and comparing the structure with conventional vertical injection structures. The direct current injection component enabled by the transverse structure significantly reduces the height of the polarization-induced potential barriers and facilitates the electron flow into the active material, improving the overall efficiency. In addition, the transverse junction structure enables a more even radiative recombination distribution from different quantum wells. We estimate the attainable optical output efficiency and also discuss the influence of the active layer design on the quantum efficiency. Based on the obtained results, shifting from the conventional 1-dimensional LED structures to genuinely 2-dimensional structures may allow new possibilities to optimize LED performance.