COLOR-TUNABLILITY IN GaN LEDs BASED ON ATOMIC EMISSION MANIPULATION UNDER CURRENT INJECTION

摘要

By controlling the injection current, the hue of the emission color is changed, and an active layer is provided between the p-type layer and the n-type layer on the substrate, and the active color layer is GaN, InN, AlN, or any two or more of them. A color-controllable light-emitting diode formed by doping Eu and Mg in a mixed crystal AlGaInN-based material; And a display unit formed by integrating image pixels including the color-adjustable light emitting diodes. A light emitting semiconductor device method capable of providing a micro-miniature and high-definition micro LED display can be provided.