Formation of InGaAs dots on InP substrate with lattice-matching growth condition by droplet heteroepitaxy

摘要

Nanometer-scale InGaAs dots on InP(001) have been successfully obtained with lattice-matching growth condition by droplet heteroepitaxy using organometallic vapor phase epitaxy,and studied by atomic force microscope (AFM) and room-temperature photoluminescence (PL).AFM observation reveals that the dots are 3-12 nm in height and 55-85 nm in base diameter.In PL measurements.Luminescence from the dots appears at longer wavelength than that expected for the bulk alloy which is discussed in relation to composition gradient in the dots.