Fabrication of InAs quantum dots by droplet epitaxy on InGaAsP lattice-matched with InP substrate

摘要

We have obtained InAs quantum dots by droplet epitaxy on InGaAsP lattice-matched with InP (001) substrates. The growth of InAs quantum dots has been investigated as a function of TMIn supply time for formation of In droplets. The growth feature of InAs dots on InGaAsP was quite different from that on InP. The coalescence of InAs quantum dots formed large dots for all the supply times on InP. However, the coalescence of InAs dots on InGaAsP was suppressed in short supply time. As a result, we successfully obtained only small dots without large dots. Emission due to InAs quantum dots was observed in electroluminescence measurements at room temperature.