CRYSTAL GROWTH OF INGAASP ON INP

摘要

PURPOSE:To realize an epitaxial growth of an InGaAsP waveguide layer while maintaining the depth of periodical unevenness of an InP layer by a method wherein the temperature is ascended in an atmosphere of a heated gas containing PH3 gas and AsH3 gas before the epitaxial growth of an InGaAsP waveguide layer is made on an InP layer with unevenness. CONSTITUTION:While an InP substrate 21 with unevenness is kept in a vapor phase reaction tube 22 until the temperature reaches the growth temperature, by vapor phase reaction tube 22 is filled with a mixed gas of AsH3 gas, PH3 gas and H2 gas which flow into the tube through an inlet 25. With this process, the temperature can reach the growth temperature 650 deg.C without reducing the depth of the unevenness of the InP substrate. A gas produced by a reaction between HCl from an HCl gas inlet 26 and molten Ga 24 and between HCl and molten In 23 is supplied onto the InP substrate 21 whose temperature is ascended in the vapor phase reaction tube 22 filled with the mixture gas of AsH3 gas, PH3 gas and H2 gas and a distributed feedback type semiconductor laser is obtained.