Wavelength tunable UV laser stimulated growth of Al_xGa_(1-x) by OMVPE

摘要

UV stimulated OMVPE growth of AlGaAs from TMG, STMA and arsine at 500 deg C was studied using a wavelength tunable pulsed laser in the range from 235 nm to 255 nm. We obsere an abrup wavelegth ege at 252 nm, below which the s timulation rate is constant and above which the growth enhancement ceases. We demonstrate a high growth contrast of 3.2:1 and show that the growth enhancement is due to photostimulation of the adlayer. The formaton of ap periodic s urface structure agrees with theory and results in growth directions deviating from [100]. Good crystall quality was determined by Raman spectroscopy.