Low resistivity ohmic contacts to n-ZnSe by utilizing a novel regrowth technique

摘要

We introduce ZnSe/(Zn, Mg)Se as a new promising material system for advanced electrical devices. By combination of MBE grown and n-type chlorine doped ZnSe with in-situ deposited Al contacts, we obtained excellent ohmic contacts and very low bulk resistivities. We developed a unique regrowth technique to achieve spatially localized doping, which is required for many unipolar devices. The method is based on selective MBE growth of chlorine doped ZnSe on an in-situ deposited and pre-structured gate dielectric, introducing a versatile platform for device fabrication. We fabricated first test devices and characterized the transport properties for different sample configurations at room- and cryogenic-temperature.