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Thin Film Optical Characteristics of InP/Si Hybrid Wafers by Chip-on-Wafer Direct Transfer Bonding Technology

机译：晶片对晶片直接转移键合技术的InP / Si混合晶片的薄膜光学特性

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Investigation of thin film characteristics of InP/Si hybrid wafers by novel chip-on-wafer direct transfer bonding technology (CoW-DTB) was carried out. 36 InP chips were successfully bonded on Si wafers by CoW-DTB and photoluminescence properties were measured and compared by

机译：利用新型的晶片上直接转移键合技术（CoW-DTB）研究了InP / Si混合晶片的薄膜特性。通过CoW-DTB成功地将36个InP芯片键合在Si晶片上，并通过以下方法对光致发光性能进行了测量和比较：

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来源
《Compound Semiconductor Week》|2019年|1-2|共2页
会议地点 Nara(JP)
作者
Nobuhiko Nishiyama; Kazuya Ohira; Liu Bai; Yoichiro Kurita; Hideto Furuyama; Miki Inamura; Tomoyuki Abe; Takuya Mitarai; Kenji Morita; Shigehisa Arai;
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作者单位

Institute of Innovative Research (IIR) Tokyo Institute of Technology Japan;

Corporate Research Development Center Toshiba Corporation Japan;

Tokyo Institute of Technology Japan;

Corpo;

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Direct bonding; Heterogenious integration Photonic integrated curcuit;

机译：直接粘接；异构集成光子集成电路;

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1. Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical liftoff and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire [J] . S. Gautier, T. Moudakir, G. Patriarche, Journal of Crystal Growth . 2013,第maya1期

机译：使用化学剥离和室温直接晶片键合以及GaN晶片规模在ZnO缓冲蓝宝石上进行GaN晶片规模的MOVPE生长，从蓝宝石转移到玻璃基板的MOVPE GaN薄膜的结构和成分表征
2. Examination of Chip-on-Wafer Plasma Activated Bonding Technology for III-V on Si Hybrid Photonic Integrated Circuits [J] . Liu Bai, Takehiko Kikuchi, Takuya Mitarai, 電子情報通信学会技術研究報告. 光エレクトロニクス. Optoelectronics . 2018,第348期

机译：Si混合光子集成电路III-V芯片上晶圆等离子体激活粘合技术的检查
3. Examination of Chip-on-Wafer Plasma Activated Bonding Technology for III-V on Si Hybrid Photonic Integrated Circuits [J] . Liu Bai, Takehiko Kikuchi, Takuya Mitarai, 電子情報通信学会技術研究報告. レ-ザ·量子エレクトロニクス. Lasers and Quantum Electronics . 2018,第349期

机译：Si混合光子集成电路III-V芯片上晶圆等离子体激活粘合技术的检查
4. Thin Film Optical Characteristics of InP/Si Hybrid Wafers by Chip-on-Wafer Direct Transfer Bonding Technology [C] . Nobuhiko Nishiyama, Kazuya Ohira, Liu Bai, Compound Semiconductor Week . 2019

机译：芯片晶圆直接转移粘接技术薄膜光学特性INP / SI杂交晶片
5. Semiconductor thin film transfer by wafer bonding and advanced ion implantation layer splitting technologies. [D] . Lee, Tien-Hsi. 1998

机译：通过晶圆键合和先进的离子注入层分离技术进行半导体薄膜转移。
6. Comparison of Argon and Oxygen Plasma Treatments for Ambient Room-Temperature Wafer-Scale Au–Au Bonding Using Ultrathin Au Films [O] . Michitaka Yamamoto, Takashi Matsumae, Yuichi Kurashima, 2019

机译：使用超薄金膜对室温和室温晶圆级Au-Au键进行氩和氧等离子体处理的比较
7. Hybrid-integrated GaAs/GaAs and InP/GaAs semiconductors through wafer bonding technology: interface adhesion and mechanical strength [O] . F. Shi 2012

机译：通过晶片键合技术的混合集成式GaAs / GaAs和InP / GaAs半导体：界面附着力和机械强度

Thin Film Optical Characteristics of InP/Si Hybrid Wafers by Chip-on-Wafer Direct Transfer Bonding Technology

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