Examination of Chip-on-Wafer Plasma Activated Bonding Technology for III-V on Si Hybrid Photonic Integrated Circuits

摘要

In order to integrate III-V semiconductors on large diameter Silicon wafers by partial bonding for III-V on Si hybrid photonic integrated circuits, Chip-on-Wafer plasma activated bonding technology was investigated and its bonding conditions were examined experimentally. First, the weight dependence of shear strength and the uniformity of photoluminescence (PL) intensity were investigated. Next, a nondestructive method to estimate the bonding property from PL data was proposed. Finally, the shear strength dependence of the chip with different stress values was investigated.