Transport and microwave properties of in-situ pulsed-laser-deposited structures YBa2Cu3O7-X/YSZ/(1012)Al2O3 and YBa2Cu3O7-X/CeO2/(1012)Al2O3

摘要

Abstract: The growth of mainly c-axis oriented YBa$-2$/Cu$-3$/O$- 7$MIN@x$/ thin films on a YSZ and CeO$-2$/ buffer layers deposited on the R-plane sapphire substrates was investigated. Both films were grown by a pulsed laser deposition technique from the multi-component targets by in- situ successive target changing during deposition. The structure and compositional properties were studied by X-ray diffraction and pulsed laser spectroscopy, respectively. The electrical resistance and the surface impedance were measured by a four-probe DC-method and by the H$-011$/ mode of a high-Q copper cavity at 135 GHz, respectively. A T$-c$/ $CNGR 86 K and $Delta@T$-c$/ $CNGR 4.1 K and R$-s$/ $CNGR 680 mOhm at 20 K for YBa$-2$/Cu$-3$/O$-7$MIN@x$/ thin films with YSZ buffer layer and T$-c$/ $CNGR 88.8 K with $Delta@T$-c$/ $CNGR 1.7 K and R$-s$/ $CNGR 105 mOhm at 20 K for YBa$-2$/Cu$-3$/O$-7$MIN@x$/ thin films with CeO$-2$/ buffer layer were obtained by an research conditions of deposition for both films. Comparison of the films characteristics grown on sapphire substrates without any buffer layer showed a good perspective of the discussed technique for large area YBa$-2$/Cu$-3$/O$-7$MIN@x$/ thin films and multi-layer structures growth on sapphire too.!10