Effect of AIGaN barrier thickness on the noise of AIGaN/GaN High electron mobility transistors

摘要

An analytical- numerical model for the drain source and gate source currents of AIGaN/GaN based HEMTs has been developed that is capable to predict accurately the effects of AIGaN barrier thickness on the cut off frequency and noise in different gate source and drain source biases. Salient features of the model are incorporated of fully and partially occupied sub-bands in the interface quantum well, combined with a self-consistent solution of the Schroedinger and Poisson equations. In addition current in the barrier of AIGaN, traps density in AIGaN are also take in to account. The calculated model results are in very good agreement with existing experimental data for HEMTs device.