Enhancement-mode GaN HEMT power electronic device with low specific on resistance

机译：电阻率低的增强型GaN HEMT功率电子器件

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摘要

An enhancement-mode GaN HEMT on silicon substrate was obtained by using p-type GaN Cap. P-type GaN cap was obtained by Mg doping. The activation concentration of the p-GaN cap was 3e17cm

机译：使用p型GaN Cap获得了硅衬底上的增强型GaN HEMT。通过掺杂Mg获得P型GaN盖。 p-GaN盖的激活浓度为3e17cm

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来源
《China International Forum on Solid State Lighting;International Forum on Wide Bandgap Semiconductors China 》|2017年|183-185|共3页
会议地点 Beijing(CN)
作者
Kong Cen; Zhou Jianjun; Kong Yuechan; Zhang Kai; Chen Tangsheng;
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State Key Laboratory of Wide-Bandgap Semiconductor Power Electronic Devices Nanjing China;

State Key Laboratory of Wide-Bandgap Semiconductor Power Electronic Dev;

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关键词
Logic gates; Gallium nitride; HEMTs; Power electronics; Substrates; Threshold voltage; Resistance;

机译：逻辑门氮化镓HEMT；电力电子；基材；门槛电压；抵抗性;

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专利

1. A GaN HEMT Structure Allowing Self-Terminated, Plasma-Free Etching for High-Uniformity, High-Mobility Enhancement-Mode Devices [J] . S. Lin, M. Wang, F. Sang, IEEE Electron Device Letters . 2016 ,第4期

机译：GaN HEMT结构允许自端接，无等离子体蚀刻，适用于高均匀性，高迁移率增强模式器件
2. Characterization and Failure Analysis of 650-V Enhancement-Mode GaN HEMT for Cryogenically Cooled Power Electronics [J] . Ren Ren, Gui Handong, Zhang Zheyu, Emerging and Selected Topics in Power Electronics, IEEE Journal of . 2020 ,第1期

机译：650V增强模式GaN HEMT用于低温冷却电力电子的表征及故障分析
3. Enhancement-Mode AlGaN/GaN HEMTs with Low On-Resistance and Low Knee-Voltage [J] . Yong CAI, Yugang ZHOU, Kei May LAU, IEICE Transactions on Electronics . 2006 ,第7期

机译：低导通电阻和低膝盖电压的增强型AlGaN / GaN HEMT
4. Enhancement-mode GaN HEMT Power Electronic Device with Low Specific On Resistance [C] . Kong Cen, Zhou Jianjun, Kong Yuechan, China International Forum on Solid State Lighting . 2017

机译：增强模式GaN HEMT电源电阻低特定电阻
5. Modeling and Characterization of High-power Electronic Devices: System Analysis of Laser Diodes with Flash Boiling and GaN HEMT Reliability Modeling [D] . Schlenker, Evan L. 2018

机译：高功率电子设备的建模与鉴定：闪光沸腾和GAN HEMT可靠性造型激光二极管的系统分析
6. Model Development for Threshold Voltage Stability Dependent on High Temperature Operations in Wide-Bandgap GaN-Based HEMT Power Devices [O] . Huolin Huang, Feiyu Li, Zhonghao Sun, 2018

机译：宽带隙GaN基HEMT功率器件中取决于高温操作的阈值电压稳定性的模型开发
7. Dynamic Rdson setup and measurements on Normally-on and Normally-off GaN-HEMT power electronic devices [O] . Bigal Silvia 2012

机译：在常开和常关GaN-HEMT功率电子器件上的动态Rdson设置和测量

Enhancement-mode GaN HEMT power electronic device with low specific on resistance

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