Design Approach and Realization of Integrated Silicon Piezoresistive Pressure Sensors for Wide Application Ranges

摘要

It has been shown, that a systematical approach for determining the electrical behavior of silicon based piezoresistive pressure sensors is possible. This method allows us to exactly determine and tune the characteristics of the sensor to certain constrains, like fixed lateral outline of a membrane, by using real process parameters. As shown by verification, this method is reliable. With this, in the future the design cycles for other products will be shortened by avoiding technology runs for first assumptions of the signal response of a pressure sensor design.