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Effects of CMP Pad Conditioner Properties and Performance on Polishing Pad, Process and Wafer Removal Rate

机译:CMP抛光垫修整剂的性能和性能对抛光垫,工艺和硅片去除率的影响

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摘要

The focus of this work is CMP pad conditioners and the impact of diamond shape, size, density and protrusion on pad cut rate, pad surface roughness and wafer removal rate. Conditioner properties such as diamond shape, density and protrusion were found to directly impact the pad cut rate and wafer removal rate. Conditioners with high variation in diamond protrusion and uneven diamond shapes exhibited high drop in pad cut rate and wafer removal rate over the test period. Conditioners with high and very aggressive diamonds led to uneven pad conditioning creating step like features on the pad. Diamonds show wearing off sharp edges and chipping of edges due to mechanical forces exerted on them during conditioning. Also diamonds on some of the tested conditioners were found to be missing or sheared off during conditioning due to the mechanical stress and weak bonding process.
机译:这项工作的重点是CMP抛光垫修整器,以及金刚石形状,尺寸,密度和突起对抛光垫切割速率,抛光垫表面粗糙度和晶圆去除速率的影响。发现诸如金刚石形状,密度和突起之类的调节剂特性直接影响垫切割速率和晶片去除速率。在测试期间,金刚石突起变化大,金刚石形状不均匀的调理剂的焊盘切割率和晶圆去除率下降很大。修整剂具有高且非常侵蚀性的钻石,导致护垫的调节不均匀,从而在护垫上形成阶梯状特征。由于修整过程中施加在其上的机械力,钻石显示出锐利的边缘磨损和边缘碎裂。另外,由于机械应力和弱结合过程,在调理过程中还发现某些经测试的调理剂上的钻石缺失或被切掉。

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