Inverse bandstructure engineering of alternative barrier materials for InGaAs-based terahertz quantum cascade lasers

摘要

Quantum cascade lasers (QCLs) are compact and powerful sources that cover a wide spectral range from infrared to terahertz (THz) radiation. The emission characteristics of QCLs depend on design parameters such as layer thickness, material composition and doping. Therefore, the material system has to be chosen accurately. This paper implemented an inverse quantum engineering algorithm to investigate the influence of the barrier material on the lasing performance and characteristics of THz active regions. Starting from an original design, barrier materials are exchanged while the wave functions are kept constant. A systematic comparison between material systems such as InGaAs/InAlAs, InGaAs/GaAsSb and InGaAs/InAlGaAs was performed with focus on quantum transport and optical gain. The quantum design with the wave functions, the electrical and the optical properties of two InGaAs-based devices, one of which is employs ternary InAlAs barriers, whereas the other device employs quaternary InAlGaAs barriers is presented. As designed, the algorithm leads to almost identical wave functions for different barrier thickness due to the different CBOs of the investigated materials. Results find that thin barrier devices employing ternary barrier materials such as InAlAs show the highest optical gain. Consequently the InGaAs/InAlAs material system, which is already commonly used for mid-infrared quantum cascade lasers, is also very well suited for high performance THz QCLs.