首页> 外文会议>CAS'95 proceedings >Zn DIFFUSION IN III-V SEMICONDUCTOR COMPOUNDS (InP, GaAs, InGaAs, InAlAs, GaAlAs) FROM POLYMER SPIN-ON FILMS

【24h】

Zn DIFFUSION IN III-V SEMICONDUCTOR COMPOUNDS (InP, GaAs, InGaAs, InAlAs, GaAlAs) FROM POLYMER SPIN-ON FILMS

机译：聚合物自旋薄膜在III-V型半导体化合物（InP，GaAs，InGaAs，InAlAs，GaAlAs）中的锌扩散

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

Zn diffusion from polymer spin-on films into III-V semiconductor compounds has been investigated. The Zn distribution profiles have been found to depend on a relation between concentration of Zn introduced in near-surface region of semiconductor and its solubility limit. A change of Al_xGa_(1-x)As composition has occured during the Zn diffusion.

机译：已经研究了锌从聚合物旋涂膜到III-V半导体化合物的扩散。已经发现Zn分布曲线取决于在半导体的近表面区域中引入的Zn的浓度与其溶解度极限之间的关系。在Zn扩散过程中，Al_xGa_（1-x）As组成发生了变化。

著录项

来源
《CAS'95 proceedings》|1995年|293-296|共4页
会议地点 Sinaia(RO);Sinaia(RO)
作者
A.V.Kamanin; A.V.Merkulov; A.M.Mintairov; I.A.Mokina; N.M.Shmidt; L.A.Busygina; T.A.Yurre;
展开▼
作者单位

A.F. Ioffe Physico-Technical Institute, Russian Academy of Science, St.Petersburg, RUSSIA;

A.F. Ioffe Physico-Technical Institute, Russian Academy of Science, St.Petersburg, RUSSIA;

A.F. Ioffe Physico-Technical Institute, Russian Academy of Science, St.Petersburg, RUSSIA;

A.F. Ioffe Physico-Technical Institute, Russian Academy of Science, St.Petersburg, RUSSIA;

A.F. Ioffe Physico-Technical Institute, Russian Academy of Science, St.Petersburg, RUSSIA;

A.F. Ioffe Physico-Technical Institute, Russian Academy of Science, St.Petersburg, RUSSIA;

A.F. Ioffe Physico-Technical Institute, Russian Academy of Science, St.Petersburg, RUSSIA;

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类半导体技术;
关键词

相似文献

外文文献
中文文献
专利

1. Characterization of Oxides Formed on InP, InGaAs, InAlAs, and InGaAs/InAlAs Heterostructures at 300–500°C [J] . R. J. Hussey, G. I. Sproule, J. P. McCaffrey, Oxidation of Metals . 2002,第5a6期

机译：在300–500°C下在InP，InGaAs，InAlAs和InGaAs / InAlAs异质结构上形成的氧化物的表征
2. Equivalent Circuit Model of InAlAs/InGaAs/InP Heterostructure Metal-Semiconductor-Metal Photodetectors [J] . Koichi IIYAMA, Junya ASHIDA, Akira TAKEMOTO, IEICE Transactions on Electronics . 2003,第11期

机译：InAlAs / InGaAs / InP异质结构金属-半导体-金属光电探测器的等效电路模型
3. Magnesium doping in InAlAs and InGaAs/Mg films lattice-matched to InP grown by MOVPE [J] . Ezzedini Maher, Sfaxi Larbi, MGhaieth Ridha Journal of nanoparticle research: An interdisciplinary forum for nanoscale science and technology . 2017,第1期

机译：在Inalas和Ingaas / mg薄膜胶片掺杂的镁与Movpe种植的Inp匹配
4. Zn diffusion in III-V semiconductor compounds (InP, GaAs, InGaAs, InAlAs, GaAlAs) from polymer spin-on films [C] . Kamanin, A.V., Merkulov, . 1995

机译：Zn从聚合物旋涂膜扩散到III-V半导体化合物（InP，GaAs，InGaAs，InAlAs，GaAlAs）中
5. Simulation and Comparison of High Speed GaAsSb-InP and InGaAs-InP Uni-Traveling-Carrier Photodiodes [D] . Guneroglu, Ugur 2019

机译：高速GaAsSb-InP和InGaAs-InP单向载流子光电二极管的仿真与比较
6. Optimization of MBE Growth Conditions of In0.52Al0.48As Waveguide Layers for InGaAs/InAlAs/InP Quantum Cascade Lasers [O] . Piotr Gutowski, Iwona Sankowska, Tomasz Słupiński, 2019

机译：InGaAs / InAlAs / InP量子级联激光器的In0.52Al0.48As波导层MBE生长条件的优化
7. Performance tradeoffs in scaling InAlAs/InGaAs/InP metal-semiconductor-metal (MSM) photodetectors [O] . Moolji Akbar 1995

机译：缩放Inalas / InGaas / Inp金属 - 半导体 - 金属（msm）光电探测器的性能折衷
8. Inductively Coupled Plasma Etching of III-V Semiconductors in BCl(3)- Based Chemistries: Part II: InP, InGaAs, InGaAsP, InAs and AllnAs;Applied Surface Science [R] . Abernathy, C. R. , Han, J. , Hobson, W. S. , 1998

机译：在BCl（3）基化学中的III-V半导体的电感耦合等离子体蚀刻：第二部分：Inp，InGaas，InGaasp，Inas和allnas;应用表面科学

Zn DIFFUSION IN III-V SEMICONDUCTOR COMPOUNDS (InP, GaAs, InGaAs, InAlAs, GaAlAs) FROM POLYMER SPIN-ON FILMS

摘要

著录项

相似文献

相关主题

期刊订阅