Laser lift-off of GaN thin film and its application to the flexible light emitting diodes

摘要

The high performance GaN light emitting diode (LED) from sapphire wafer has been transferred on a plastic substratewith 308nm XeCl laser lift-off (LLO) for next generation flexible lighting applications. SU-8 passivation withthermal release tape (TRT) adhesive enables structure coverage and adhesion so that it can be an excellent candidate fora carrier substrate for non-wetting transfer process using laser liftoff technology. The dimensions of the laser beam arealso investigated in two types (3μm x 5cm and 1.2mm x 1.2mm) to reduce stress when decomposition of GaN occurs.With careful optimization of carrier substrate and laser beam conditions, we can fabricate flexible GaN LED onpolyimide substrates which shows similar electrical properties to the GaN LED on bulk sapphire substrate.© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.