Improvement of light extraction from GaN-based thin-film light-emitting diodes by patterning undoped GaN using modified laser lift-off

摘要

To improve light extraction from GaN-based light-emitting diodes (LEDs), we demonstrated an approach of modified laser lift-off (M-LLO) technique for patterning undoped GaN (u-GaN). The M-LLO consists in sequentially forming a two-dimensional triangular l