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Plasma Enhanced Atomic Layer Deposition on Powders

机译:粉末上的等离子体增强原子层沉积

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摘要

During the last decades atomic layer deposition (ALD) gained a lot of interest for coating three dimensional structures with ultrathin conformal films. Although mainly applied on silicon wafers in microelectronics and solar, experimental efforts confirmed the technique is also applicable to powders and particles. This opens a wide window of new opportunities for ALD such as catalytic activation of powder surfaces, encapsulation and modifying powder rheology. Up to recently only thermal ALD on powders had been reported. For some processes however, plasma enhanced ALD (PE ALD) would be preferable. The higher reactivity during PE ALD results in several advantages including higher deposition rates, lower deposition temperatures and higher purity, while it extends the library of materials that can be grown. This paper elaborates on a rotary reactor for thermal and plasma enhanced ALD on powders, including a brief study of coatings like Al_2O_3, AlN and TiN.
机译:在最近的几十年中,原子层沉积(ALD)引起了人们对用超薄保形膜涂覆三维结构的兴趣。尽管主要应用于微电子学和太阳能领域的硅晶圆,但实验证明该技术也适用于粉末和颗粒。这为ALD开辟了新的广阔机会,例如粉末表面的催化活化,包封和改变粉末流变性。直到最近,仅报道了粉末上的热ALD。然而,对于某些工艺,等离子体增强的ALD(PE ALD)将是更可取的。 PE ALD期间较高的反应性带来了许多优势,包括更高的沉积速率,更低的沉积温度和更高的纯度,同时它扩展了可以生长的材料库。本文详细介绍了用于粉末热和等离子体增强ALD的旋转反应器,包括对Al_2O_3,AlN和TiN等涂层的简要研究。

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  • 会议地点 Cancun(MX)
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    Department of Solid State Sciences, Ghent University, Krijgslaan 281/S1, B-9000 Ghent, Belgium;

    Department of Solid State Sciences, Ghent University, Krijgslaan 281/S1, B-9000 Ghent, Belgium;

    Department of Solid State Sciences, Ghent University, Krijgslaan 281/S1, B-9000 Ghent, Belgium;

    Department of Solid State Sciences, Ghent University, Krijgslaan 281/S1, B-9000 Ghent, Belgium;

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