首页> 外文会议>ASME international design engineering technical conferences and computers and information in engineering conference 2010 >PARAMETRIC ANALYSIS OF IRRADIANCE DISTRIBUTION IN PROXIMITY PRINTING OF MICRO CIRCULAR AND ANNULUS APERTURES
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PARAMETRIC ANALYSIS OF IRRADIANCE DISTRIBUTION IN PROXIMITY PRINTING OF MICRO CIRCULAR AND ANNULUS APERTURES

机译:圆形和环形微孔近距离打印中辐照度分布的参数分析

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Proximity printing is one of the lithography processes used in fabricating micro-scale components and systems to transfer mask pattern to the substrate. This paper investigates pattern distortion in the proximity printing process of circular arrays and annulus arrays in micro scale by dimensionless parameters. The effect is analyzed based on the Huygens-Fresnel diffraction theorem. The irradiance distribution exposed on the photoresist at different εx, the dimensionless parameter representing the ratio of the gap between the mask and the photoresist to the radius of the circular aperture, are investigated. Two dimensional (2D) and 3D irradiance distributions on the projected photoresist for single-aperture, dual-aperture and multi-aperture masks are analyzed and simulated. It showed that diffraction effect, which causes interactions among apertures, increases as ε,x decreases. This results in the distortion of the projected pattern in proximity printing. The boundaries between the exposed and shared areas are blurred when %x increases. The effect of annulus patterns is further investigated by introducing another parameter εa, the ratio between the radii of the inner and the outer circles. It is found that peaks appear at the center that is supposed no exposure. It also found that the intensity of exposition moves to the outer area when εa increases. Experiments to verify the simulated distortion is also conducted using a He-Ne laser. The results showed consistency with the simulation and verified that near-field diffraction is the major factor for the pattern distortion as the diffraction becomes stronger when ε,x decreases.
机译:邻近印刷是用于制造微尺度部件和系统以将掩模图案转移至基板的光刻工艺之一。本文利用无量纲参数研究了微尺度圆形阵列和环形阵列在邻近印刷过程中的图案变形。根据惠更斯-菲涅耳衍射定理分析该效应。研究了以不同的εx曝光在光致抗蚀剂上的辐照度分布,该无量纲参数表示掩模和光致抗蚀剂之间的间隙与圆形孔半径的比率。分析并模拟了用于单孔,双孔和多孔掩模的投影光刻胶上的二维(2D)和3D辐照度分布。结果表明,引起孔间相互作用的衍射效应随着ε,x的减小而增加。这导致邻近打印中投影图案的变形。当%x增加时,暴露区域和共享区域之间的边界将变得模糊。通过引入另一个参数εa,即内圆和外圆的半径之比,可以进一步研究环形空间的影响。发现在未曝光的中心出现峰。还发现,当εa增大时,曝光强度会移动到外部区域。还使用氦氖激光器进行了验证模拟失真的实验。结果表明与仿真一致,并证明当ε,x减小时,随着衍射变强,近场衍射是造成图案变形的主要因素。

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