THE EFFECT OF PRESSURE ON THE MICROSTRUCTURAL BEHAVIOUR ON SnO_2 THIN FILMS DEPOSITED BY RF SPUTTERING

摘要

Tin oxide has multiple technological applications including Li-ion batteries, gas sensors, optoelectronic devices, transparent conductors and solar cells. In this study tin dioxide (SnO_2) thin films were deposited on glass substrates by RF sputtering process in the oxygen (O_2) and argon (Ar) plasma medium. The deposition of the thin SnO_2 films was carried out by RF sputtering from SnO_2 targets. Before deposition the system was evacuated to 10~(-4) torr vacuum level and backfilled with Ar. The deposition of the nano structured thin SnO_2 films have been performed at different gas pressures. The deposition of the SnO_2 was both carried out at different pure argon gas pressures and argon/oxygen mediums with varying oxygen partial pressures. The effect of argon and argon/oxygen partial gas pressures on the grain structure and film thickness were analyzed in the resultant thin films. The deposited thin films both on glass and stainless steel substrates were characterized with scanning electron microscopy (SEM), X-ray diffractometry equipped with multi purpose attachment. The grain size of the deposited layer was determined by X-ray analysis. The Atomic Force Microscopy (AFM) technique was also conducted on the some selected coatings to reveal grain structure and growth behaviors.