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Picosecond photoluminescence of a-Si:H/a-SiNx:H multilayers

机译:a-Si:H / a-SiNx:H多层膜的皮秒光致发光

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Abstract: The dynamics of the carrier recombination in a-Si:H/a-SiN$- $chi$/:H multilayers has been investigated with picosecond photoluminescence spectroscopy. The thermalization of photogenerated carriers is a direct hopping process. The decay time cutoff, the mobility edge and the band-tail width vary non- monotonously with a turning point near x $EQ 0.85, which is attributed to the changes of the built-in field and the multilayer structure with nitrogen content.!9
机译:摘要:通过皮秒光致发光光谱研究了a-Si:H / a-SiN $-$ chi $ /:H多层中载流子复合的动力学。光生载流子的热化是直接跳跃过程。衰减时间截止,迁移率边缘和带尾宽度随x $ EQ 0.85附近的拐点非单调变化,这归因于内建磁场和含氮量的多层结构的变化!9

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