Investigation of Induced Distortions in a-Si∶H/a-SiN_x∶H Multilayers by Raman Scattering Technique

摘要

The a Si∶H/SiN x ∶H sample series are investigated by means of Raman scattering technique(RST). The result shows that due to the structural mismatch between a Si∶H and a SiN x ∶H, severe induced distortions are produced in the interface of the heterojunction, and these induced distortions tend towards a certain energy state. The ordering of the interface structure depends on the periodic number of multilayer thin films.