Picosecond photoluminescence of a-Si:H/a-SiNx:H multilayers

摘要

The dynamics of the carrier recombination in a-Si:H/a-SiN$- $chi$/:H multilayers has been investigated with picosecond photoluminescence spectroscopy. The thermalization of photogenerated carriers is a direct hopping process. The decay time cutoff, the mobility edge and the band-tail width vary non- monotonously with a turning point near x $EQ 0.85, which is attributed to the changes of the built-in field and the multilayer structure with nitrogen content.