Current transport characteristics of graphene/hBN/GaN heterojunction Schottkybarrier diode

摘要

Recently, significant importance has been given to fabricate a graphene/GaN heterojunction considering the outstanding electronic properties of both the materials. The Schottky barrier diode (SBD) structure of graphene/GaN has great potential for ultraviolet photodiode and switching device application. The metal-insulator-semiconductor (MIS) based SBD are considered to be ideal for lowering the reverse saturation current. In this context, we studied the device properties of a graphene/hBN/GaN heterojunctionSBD.