Transparent and conductive layers used for Reducing Optical Reflection Loss for FabricatingMechanically Stacked Multi-Junction Solar Cells

摘要

157-nm thick SnO2 layers formed by spin coating were applied to reduce the optical reflection loss for the stacking sample of GaAs and Si. Reduction of optical reflectivity was observed. Aeff ranged from 0.84 to 0.87 for light incident angle from 0 to 60°, while 130-nm-thick IGZO realized higher Aeff ranged from 0.92 to 0.95.