Time resolved measurement of Joule-heating-induced magnetization dynamics inmagnetic tunnel junctions

摘要

It is essential to conduct high speed and low-power-consumption magnetization switching for magnetic random access memory using magnetic tunnel junctions (MTJs). Switching by changing magnetic anisotropy is an effective way to control magnetization direction. It is reported that magnetic anisotropy can be changed by voltage [1], which is known as voltage-controlled magnetic anisotropy (VCMA). Magnetization switching induced by nanosecond-order pulse voltage is also reported [2]. Moreover, we have reported that Joule heating in MTJs induces magnetization dynamics through temperature dependence of the magnetic anisotropy [3]. In this study, we study the response time of the Joule-heating-induced magnetization dynamics in MTJs.