Effects of wet-POA with various conditions on 4H-SiC m-face MOS interface properties

摘要

Wet oxidation of SiC often results in significantly different MOS interface properties from dry oxidation [1,2]. We demonstrated on 4H-SiC Si-face, that the combination of dry oxidation and post-oxidation annealing in wet ambience (wet-POA) has a positive impact on MOSFET mobility [3]. For m-face, we also reported the reduction of MOS interface state density (D_(it)) by the same approach [4], but the impact of the selection of wet-POA conditions has not been clarified. In this research, we systematically investigated the effects of wet-POA with various conditions on m-face, focusing on Dit and bias stress instability.