MOVPE growth of GaAs-based tunneling diode for multiple junction solar cells

摘要

The recent record conversion efficiency of 46%has been realized by InGaP/GaAs/InGaAsP/InGaAs4-junction (4J) solar cells fabricated by direct waferbonding technique . Our group reported in thiscommunity about the optimization of metalorganicvapor phase epitaxy (MOVPE) growth forInGaAsP/InGaAs dual junction solar cells . In thiswork, we investigated and optimized the growthconditions for GaAs-based tunneling diodes (TDs)for InGaP/GaAs electrical interconnection as afurther step toward the fabrication of 4J solar cells.