首页> 外文会议>Annual International Conference on Compound Semiconductor MANufacturing TECHnology(CS MANTECH); 20050411-14; New Orleans,LA(US) >The Effects of Hydrogen Bromide and Argon-Hydrogen on the Plasma Processing on the Surface Structure of HgCdTe
【24h】

The Effects of Hydrogen Bromide and Argon-Hydrogen on the Plasma Processing on the Surface Structure of HgCdTe

机译:溴化氢和氩氢对等离子体处理HgCdTe表面结构的影响

获取原文
获取原文并翻译 | 示例

摘要

Argon/hydrogen gas chemistry has been the basis for HgCdTe and CdTe plasma processing. This paper examines the effects that Argon/hydrogen plasma hav te on the crystalline surface structure of HgCdTe, CdZnTe, and CdTe using in-vacco Reflection high energy electron diffraction (RHEED). This paper also examines the effects that HBr, since the wet chemical etching of HgCdTe systems is based on bromine, in an attempt improve flexability of HgCdTe and CdTe plasma processing.
机译:氩气/氢气化学已成为HgCdTe和CdTe等离子体处理的基础。本文使用真空反射高能电子衍射(RHEED)研究了氩气/氢等离子体对HgCdTe,CdZnTe和CdTe晶体表面结构的影响。本文还研究了HBr的影响,因为HgCdTe系统的湿法化学蚀刻是基于溴的,从而试图提高HgCdTe和CdTe等离子体处理的柔性。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号