Corrective Planarization Method Using Chemical Mechanical Polishing Assisted by Laser Particle Trapping

摘要

The new planarization method is proposed and attempted by experiments. This method indicates two unique points as follows: (1) The aggregated marks are forms with laser irradiation on surface of silicon water. The aggregated marks are made of fine particles in slurry. (2) After aggregated marks are formed and filled up at the recessed areas of surface of silicon wafer, polishing is carried out. This process is possible to realize high planarity on silicon wafer. As a final result, the smooth surface with surface roughness is obtained with the LAFP (Laser Aggregation, Filling-up & Polishing) method, and the method has a high potential for planarization.