首页> 外文会议>The American Society for Precision Engineering Seventeenth Annual Meeting Oct 20-25, 2002 St.Louis, Missouri >High Removal Rate Ultra-Smoothness Polishing of NiP Plated Aluminum Magnetic Disk Substrate by Means of High Polishing Speed with High Polishing Pressure
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High Removal Rate Ultra-Smoothness Polishing of NiP Plated Aluminum Magnetic Disk Substrate by Means of High Polishing Speed with High Polishing Pressure

机译:高抛光速度和高抛光压力对NiP电镀铝磁盘基板的高去除率超光滑抛光

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摘要

The main results obtained are as follows: (1) The substrate removal rate becomes larger f higher polishing speed and pressure. (2) The slight undulation and the surface roughness converge finally to a terminal value corresponding to a given polishing condition. (3) The polishing pressure has little influence on the terminal slight undulation and the surface roughness. (4) The terminal surface roughness is influenced little by polishing speed (5) The terminal slight undulation of about 0.47nm(Ra) at Va=9m/s using alumina abrasives of 50nm diameter is becomes somewhat larger than that of about 0.37nm(Ra) at Va=1.5m/s. (6) The surface smoothness and the removal rate at Va = 9m/s using alumina abrasives of 50nm diameter is smoother and larger than those at 1.5m/s using alumina abrasives of 0.5μm diameter.
机译:获得的主要结果如下:(1)在更高的抛光速度和压力下,衬底去除率变得更大。 (2)轻微的起伏和表面粗糙度最终收敛到与给定抛光条件相对应的最终值。 (3)抛光压力对端子的轻微起伏和表面粗糙度影响很小。 (4)抛光速度对端子表面粗糙度的影响不大(5)使用直径为50nm的氧化铝磨料在Va = 9m / s时,端子的轻微起伏约为0.47nm(Ra),比约0.37nm的粗糙度稍大( Ra)在Va = 1.5m / s。 (6)使用直径为50nm的氧化铝磨料在Va = 9m / s时的表面光滑度和去除率比使用直径为0.5μm的氧化铝磨具在1.5m / s时的表面光滑度和去除率更大。

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