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Multifunctional hardmask neutral layer for directed self-assembly (DSA) patterning

机译:用于定向自组装(DSA)图案化的多功能硬掩模中性层

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Micro-phase separation for directed self-assembly (DSA) can be executed successfully only when the substrate surface on which the block co-polymer (BCP) is coated has properties that are ideal for attraction to each polymer type. The neutral underlayer (NUL) is an essential and critical component in DSA feasibility. Properties conducive for BCP patterning are primarily dependent on "brush" or "crosslinked" random co-polymer underlayers. Most DSA flows also require a lithography step (reflection control) and pattern transfer schemes at the end of the patterning process. A novel multifunctional hardmask neutral layer (HM NL) was developed to provide reflection control, surface energy matching, and pattern transfer capabilities in a grapho-epitaxy DSA process flow. It was found that the ideal surface energy for the HM NL is in the range of 38-45 dyn/cm. The robustness of the HM NL against exposure to process solvents and developers was identified. Process characteristics of the BCP (thickness, bake time and temperature) on the HM NL were defined. Using the HM NL instead of three distinct layers - bottom anti-reflective coating (BARC) and neutral and hardmask layers - in DSA line-space pitch tripling and contact hole shrinking processes was demonstrated. Finally, the capability of the HM NL to transfer a pattern into a 100-nm spin-on carbon (SOC) layer was shown.
机译:仅当涂覆了嵌段共聚物(BCP)的基材表面具有吸引每种聚合物的理想性能时,才能成功执行定向自组装(DSA)的微相分离。中性底层(NUL)是DSA可行性中必不可少的关键组成部分。有助于BCP图案化的性质主要取决于“刷子”或“交联的”无规共聚物底层。大多数DSA流程在图案化过程结束时还需要光刻步骤(反射控制)和图案转移方案。开发了一种新颖的多功能硬掩模中性层(HM NL),以在图形外延DSA工艺流程中提供反射控制,表面能匹配和图案转移功能。已经发现,对于HM NL,理想的表面能在38-45达因/厘米的范围内。确认了HM NL对暴露于工艺溶剂和显影剂的坚固性。定义了HM NL上BCP的工艺特性(厚度,烘烤时间和温度)。演示了在DSA线间距间距三倍和接触孔缩小工艺中使用HM NL代替三个不同的层-底部抗反射涂层(BARC)和中性和硬掩模层。最后,显示了HM NL将图案转移到100 nm旋涂碳(SOC)层中的能力。

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