Serially connected monolayer MoS FETs with channel patterned by a 7.5 nm resolution directed self-assembly lithography

摘要

We demonstrate sub-10 nm transistor channel lengths by directed self-assembly patterning of monolayer MoS[subscript 2] in a periodic chain of homojunction semiconducting-(2H) and metallic-phase (1T') MoS[subscript 2] regions with half-pitch of 7.5 nm. The MoS[subscript 2] composite transistor possesses an off-state current of 100 pA/μm and an I[subscript on]/I[subscript off] ratio in excess of 10[subscript 5]. Modeling of the resulting current-voltage characteristics reveals that the 2H/1T' MoS[subscript 2] homojunction has a resistance of 75 Ω.μm while the 2H-MoS[subscript 2] exhibits low-field mobility of ~8 cm[superscript 2]/V.s and carrier injection velocity of ~10[superscript 6] cm/s.